Rapid formation of single crystalline Ge nanowires by anodic metal assisted etching
نویسندگان
چکیده
منابع مشابه
Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching
Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 ...
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ژورنال
عنوان ژورنال: CrystEngComm
سال: 2016
ISSN: 1466-8033
DOI: 10.1039/c6ce01598k